SU8

Our Classic products: SU-8

Today you need more from your suppliers than just materials. You need specific resources that can carry out your project from conception to commercialization. Gersteltec can be your partner in achieving this result.

Gersteltec offers several kinds of classic SU-8 photoresists products under different products forms that can give your company an extra competitive edge. GM10xx and GMPI10xx series for semiconductors applications.

Gersteltec

Gersteltec offers ready-to-use formulated products with different types of filler, pigments, ink and solvent (ceton, ether acetate, aromathic and more) according to your needs. Gersteltec photoepoxy materials and products meet and exceed the needs of the world´s leading microsystem device makers with advanced functional SU-8 photoresist.

GM10xx series

GM1010 for layers smaller than 0.2 µmSpray
GM1020 for layers between 0.2-0.5µmSpin, Spray, Inkjet
GM1030 for layers between 0.5-1.2µmSpin, Spray, Inkjet
GM1040 for layers between 0.9-3.2µmSpin, Spray, Inkjet
GM1050 for layers betwwen 3-8µmSpin, Inkjet
GM1060 for layers between 5-27µmSpin, Inkjet
GM1070 for layers between 15-200µmSpin, Inkjet
GM1075 for layers between 100-400µmSpin, Inkjet

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Thin Resist

GM1010

Performances• High resolution • Vertical sidewalls • Aspect ratio up to 30 by standard UV lithography • Short bake time
Applications• Dielectric layer with high resolution and complex shape for transistors passivation/interlayer • Coating by Spray, Inkjet, E-Beam • Display and flexible display • Planarisation layers for AMOLED • MEMS, BioMEMS, NanoMEMS, (Courtesy of Prof. Xiaojun Guo, Shanghai Jiao Tong University Chine).
Properties• Thin layers: <0.2μm • Chemically resistant • Thermal stability: 350°C • Young’s modulus: 4.6 GPa • Hardness: 370 MPa • CTE: 52 ppm (Courtesy of Prof. Eli Kapon LPN, EPFL Switzerland).

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Thin Resist

GM1020

Performances• High resolution • Vertical sidewalls • Aspect ratio up to 30 by standard UV lithography • Short bake time
Applications• Dielectric layer with high resolution and complex shape for transistors • Coating by Spray, Inkjet, E-Beam • Display and flexible display • Planarisation layers for AMOLED • MEMS, BioMEMS, NanoMEMS, (Courtesy of Prof. Eli Kapon LPN, EPFL Switzerland).
Properties• Thin layers: 0.2-0.5μm • Chemically resistant • Thermal stability: 350°C • Young’s modulus: 4.6 GPa • Hardness: 370 MPa • CTE: 52 ppm,(Courtesy of Prof. Eli Kapon LPN, EPFL Switzerland).

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Thin Resist

GM1030

Performances• High resolution • Vertical sidewalls • Aspect ratio up to 30 by standard UV lithography • Short bake time
Applications• Dielectric layer with high resolution and complex shape for transistors • Interconnect by different metal coated SU8 electrodes, Coating by Spray, Inkjet, E-Beam • Microfludics • MEMS, BioMEMS, NanoMEMS
Properties• Thin layers: 0.5-1.2μm • Chemically resistant • Thermal stability: 350°C • Young’s modulus: 4.6 GPa • Hardness: 370 MPa • CTE: 52 ppm, (courtesy of Sebastien Jiguet Gersteltec Switzerland).

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Thin Resist

GM1040

Performances• High resolution • Vertical sidewalls • Aspect ratio up to 30 by standard UV lithography • Short bake time
Applications• Dielectric layer with high resolution and complex shape for transistors • Coating by Spray, Inkjet, E-Beam • Microfludics • MEMS, BioMEMS, NanoMEMS, (Courtesy of Marc Heuschkel , Qwane).
Properties• Thin layers: 0.9-3.2μm • Chemically resistant • Thermal stability: 350°C • Young’s modulus: 4.6 GPa • Hardness: 370 MPa • CTE: 52 ppm (Courtesy of Kevin Keim, Guiducci Lab, EPFL, Switzerland).

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Thin Resist

GM1050

Performances• High resolution • Vertical sidewalls • Aspect ratio up to 30 by standard UV lithography • Short bake time
Applications• Dielectric layer with high resolution and complex shape for transistors • Coating by Spray, Inkjet, E-Beam • Microfludics • MEMS, BioMEMS, NanoMEMS, (Courtesy of EuroLCDs, Latvia).
Properties• Thin layers: 3-8μm • Chemically resistant • Thermal stability: 350°C • Young’s modulus: 4.6 GPa • Hardness: 370 MPa • CTE: 52 ppm

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Thick Resist

GM1060

Performances• High resolution • Vertical sidewalls • Aspect ratio up to 30 by standard UV lithography • Short bake time
Applications• Dielectric layer with high resolution and complex shape for transistors • Coating by Spray, Inkjet, E-Beam • Microfludics • MEMS, BioMEMS, NanoMEMS
Properties• Thick layers: 5-27μm • Chemically resistant • Thermal stability: 350°C • Young’s modulus: 4.6 GPa • Hardness: 370 MPa • CTE: 52 ppm, (courtesy of Duchamp Margaux Marie and Sebatien Jiguet LMSI4 EPFL Switzerland).

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Thick Resist

GM1070

Performances• High resolution • Vertical sidewalls • Aspect ratio up to 30 by standard UV lithography • Short bake time
Applications• Dielectric layer with high resolution and complex shape for transistors • Coating by Spray, Inkjet, E-Beam • Microfludics • MEMS, BioMEMS, NanoMEMS
Properties• Thick layers: 15-200μm • Chemically resistant • Thermal stability: 350°C • Young’s modulus: 4.6 GPa • Hardness: 370 MPa • CTE: 52 ppm, (courtesy of Sebatien Jiguet LMSI4 EPFL Switzerland).

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Thick Resist

GM1075

Performances• High resolution • Vertical sidewalls • Aspect ratio up to 30 by standard UV lithography • Short bake time • Low processing temperature
Applications•Thick layer for MEMS, Microfludic, LIGA
Properties•High resolution • Thick layers: 100-400μm •Vertical sidewalls •Aspect ratio up to 30 by standard UV lithography • Short bake time • Low processing temperature

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GMPI10xx series

GMPI1010 for layers smaller than 0.2 µmSpray
GMPI1020 for layers between 0.2-0.5µmSpin, Spray, Inkjet
GMPI1030 for layers between 0.5-1.2µmSpin, Spray, Inkjet
GMPI1040 for layers between 0.9-3.2µmSpin, Spray, Inkjet
GMPI1050 for layers betwwen 3-8µmSpin, Inkjet
GMPI1060 for layers between 5-27µmSpin, Inkjet
GMPI1070 for layers between 15-200µmSpin, Inkjet
GMPI1075 for layers between 100-400µmSpin, Inkjet

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Thin Resist

GMPi10xx

Performances• High resolution • Vertical sidewalls • Aspect ratio up to 30 by standard UV lithography • Short bake time
Applications• Dielectric layer with high resolution and complex shape for transistors • Coating by Spray, Inkjet, E-Beam • Display and flexible display • Planarisation layers for AMOLED • MEMS, BioMEMS, NanoMEMS
Properties• Thin layers: <0.2μm • Chemically resistant • Thermal stability: 350°C • Young’s modulus: 4.6 GPa • Hardness: 370 MPa • CTE: 52 ppm

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Innovation and investment in the future are hallmarks of Gersteltec's approach

SU-8 photoresist is based on an epoxy resin developed by IBM. SU-8 is a thick, near-UV photoresist technology through i-line, and has advantages for the semiconductor industry as well as for microtechnologies and nano applications.

SU-8 is used in the development of MEMS, MOMES, UV-LIGA microfabrication and coatings. SU-8 can be patterned by several lithography techniques, such as X-ray, UV and e-Beam.

SU-8 is specifically used for applications requiring high aspect ratios in very thick layers with vertical sidewall profiles.

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